MPSH10/11 transistor (npn) features power dissipation p cm: 0.35 w (tamb=25 ) collector current i cm: 0.05 a collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a, i e =0 30 v collector-emitter breakdown voltage v(br) ceo ic= 1ma, i b =0 25 v emitter-base breakdown voltage v(br) ebo i e = 10 a, i c =0 3 v collector cut-off current i cbo v cb = 25v, i e =0 0.1 a collector cut-off current i ceo v ce = 20v, i b =0 0.2 a emitter cut-off current i ebo v eb = 2v, i c =0 0.1 a dc current gain h fe v ce = 10v, i c = 4ma 60 200 collector-emitter saturation voltage v ce (sat) i c =4ma, i b =0.4ma 0.5 v collector-emitter voltage v be (on) v ce =10v, i c =4ma 0.95 v transition frequency f t v ce = 10v, i c =4ma f =100mhz 650 mhz 1 2 3 to-92 1. base 2. emitter 3. collector MPSH10/11 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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